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Freescale Semiconductor Technical Data
Document Number: MRF6P21190HR6 Rev. 2, 8/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26.5% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * Pb - Free and RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P21190HR6
2170 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 700 4 - 65 to +150 200 190 Unit Vdc Vdc W W/C C C W
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 190 W CW Case Temperature 72C, 44 W CW Symbol RJC Value (1,2) 0.25 0.27 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6P21190HR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1900 mAdc) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th) VGS(Q) VDS(on) gfs
1 2 0.1 --
2 2.8 0.21 5.3
3 4 0.3 --
Vdc Vdc Vdc S
Crss
--
1.5
--
pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2 x 950 mA, Pout = 44 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push - pull configuration. Gps D IM3 ACPR IRL 14.5 25 -- -- -- 15.5 26.5 - 37 - 40 - 15 17.5 -- - 35 - 38 -9 dB % dBc dBc dB
MRF6P21190HR6 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C6 R1 C5 + C4 C3 B2 R2 Z4 RF INPUT Z1 Z2 Z3 C7 B3 VBIAS + C12 R3 C11 + C10 C9 B4 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 0.850 x 0.067 Microstrip 1.140 x 0.114 Microstrip 1.830 x 0.067 Microstrip 0.088 x 0.067 Microstrip 0.250 x 0.067 Microstrip 0.324 x 0.178 Microstrip 0.143 x 0.655 Microstrip 0.111 x 0.655 Microstrip 0.124 x 0.712 Microstrip Z15, Z16 Z17, Z18 Z19, Z20 Z21 Z22 Z23 Z24 PCB C8 C1 DUT Z5 Z7 Z9 Z11 Z13 Z6 Z8 Z10 Z12 C2 Z14
+ C14 C15
+ C19 C16 C17 C18
+ C20
+ VSUPPLY C21
Z16
Z18
Z20 C13
Z22
Z23
RF Z24 OUTPUT
Z15
Z17
Z19 C22
Z21
+ C23 C24
+ C28 C25 C26 C27
+ C29
+ VSUPPLY C30
0.289 x 0.712 Microstrip 0.127 x 0.200 Microstrip 0.288 x 0.067 Microstrip 0.088 x 0.067 Microstrip 1.830 x 0.067 Microstrip 1.140 x 0.114 Microstrip 0.850 x 0.066 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part B1, B2, B3, B4 C1, C7 C2, C8, C15, C24 C3, C9, C18, C27 C4, C10 C5, C11, C17, C26 C6, C12 C13, C22 C14, C19, C20, C23, C28, C29 C16, C25 C21, C30 R1, R3 R2, R4 RF Beads 30 pF Chip Capacitors 6.8 pF Chip Capacitors 1k pF Chip Capacitors 1 F, 50 V Tantalum Chip Capacitors 0.1 F Chip Capacitors 100 F, 50 V Electrolytic Capacitors, Radial 43 pF Chip Capacitors 22 F, 35 V Tantalum Chip Capacitors 0.56 F Chip Capacitors (1825) 470 F, 63 V Electrolytic Capacitors, Radial 1 kW, 1/4 W Chip Resistors (1206) 12 W, 1/4 W Chip Resistors (1206) Description Part Number 2743019447 100B300JP500X 100B6R8CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 100B430JP500X T491X226K035AS C1825C564J5RAC MCR63V477M13X26 CRCW12061001F100 CRCW120612R0F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Vishay Vishay
MRF6P21190HR6 RF Device Data Freescale Semiconductor 3
+
C6 R1 C5 C4
C3
MRF6P21190 Rev 2
C14 C15 C16
C17
C18
-
C21
C2 R2 B1 B2 C1 C19 C20 C13
+
CUT OUT AREA
C7 R4 B3 B4
C22 C28 C29
+ +
C12 R3 C11 C10 C9 C8 C23 C24 C25 C26 C27
-
-
C30
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
MRF6P21190HR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
20 18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 ACPR 4 2080 2100 2120 2140 2160 2180 2200 -50 2220 IRL -20 IM3 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) -30 -40 Gps VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing D 40 30 20 10 -10 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 IDQ = 2500 mA 10 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts Avg.
20 18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 4 2080 ACPR 2100 2120 2140 2160 2180 2200 IRL D Gps VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing
50 40 30 20 0 -10 IM3 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) -20 -30 -40 2220
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 87 Watts Avg.
17 16.5 Gps, POWER GAIN (dB) 2200 mA 16 1900 mA 15.5 1600 mA 15 14.5 14 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1300 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2500 mA
-30
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 2200 mA
-35 1900 mA 1600 mA -45
-40
-50 1300 mA -55 1 100 400 Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6P21190HR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 -55 0.1 7th Order 5th Order 3rd Order VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA Two-Tone Measurements, Center Frequency = 2140 MHz Pout, OUTPUT POWER (dBm)
58 57 56 55 54 53 52 51 50 49 48 47 1 10 100 32 33 34 35 36 37 38 39 40 41 42 43 44 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz P1dB = 53.7 dBm (233 W) Actual P3dB = 54.45 dBm (279 W) Ideal
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc, IDQ = 1900 mA f1 = 2135 MHz, f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) -30 IM3 -35 -40 Gps -45 -50 -55 -60 100 IM3 (dBc), ACPR (dBc) ACPR 15 Gps, POWER GAIN (dB) 12 9 6 3 0 3 D 18 Gps
Figure 8. Pulse CW Output Power versus Input Power
60 D, DRAIN EFFICIENCY (%) 50 40 30 20 VDD = 28 Vdc IDQ = 1900 mA f = 2140 MHz 10 100 10 0 300
D
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
18 16 Gps, POWER GAIN (dB)
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
VDD = 28 V 14 12 24 V 10 8 6 3 10 IDQ = 1900 mA f = 2140 MHz 16 V 12 V 100 500 20 V
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power MRF6P21190HR6 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1010 MTTF FACTOR (HOURS x AMPS2)
109
108
107 90
100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ +5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ +10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF
+20 +30 0 -10 -20 -30 -40 -50 -60 -70
3.84 MHz Channel BW
-ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -15 -10 -5 0 5 10
+IM3 @ 3.84 MHz BW 15 20 25
-80 -25 -20
f, FREQUENCY (MHz)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6P21190HR6 RF Device Data Freescale Semiconductor 7
Zo = 25 f = 2200 MHz f = 2200 MHz Zload Zsource
f = 2000 MHz
f = 2000 MHz
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg. f MHz 2000 2110 2140 2170 2200 Zsource 5.63 - j12.88 4.36 - j10.02 4.56 - j8.49 5.11 - j7.41 5.42 - j6.67 Zload 3.43 - j10.06 3.22 - j7.13 3.39 - j6.07 3.76 - j5.45 3.69 - j5.16
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 15. Series Equivalent Source and Load Impedance
MRF6P21190HR6 8 RF Device Data Freescale Semiconductor
NOTES
MRF6P21190HR6 RF Device Data Freescale Semiconductor 9
NOTES
MRF6P21190HR6 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE)
B
D
TA
M
B
M
ccc ccc
M
M
TA
(LID)
M
B
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375D - 05 ISSUE E NI - 1230
MRF6P21190HR6 RF Device Data Freescale Semiconductor 11
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MRF6P21190HR6
Rev. 12 2, 8/2005 Document Number: MRF6P21190HR6
RF Device Data Freescale Semiconductor

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